High-performance ultraviolet photodetectors based on 2D layered In4/3P2Se6 nanoflakes

Abstract

Ultraviolet photodetectors (UV PDs) based on 2D layered materials have attracted much attention because of the great applications in the fields of biology, healthcare, and space science, as well as the unique optical and electrical properties of 2D layered materials. Many UV PDs have been reported. However, high performance UV PDs with high responsivity and ultrafast light response time still need to be explored further. Here, we synthesized layered In4/3P2Se6 nanoflakes via the chemical vapor conversion (CVC) method. The UV PDs based on as-grown In4/3P2Se6 nanoflakes exhibit a very high light switching ratio of up to 6 × 105 at room temperature, which is ascribed to the large photocurrent and an ultralow dark current of ∼80 fA. Meanwhile, an ultrafast rise and a decay time of ∼ 470 μs/440 μs are achieved. The according responsivity, external quantum efficiency, and special detectivity are 4.31 A W−1, 1485.2%, and 6.3 × 1012 Jones, respectively, which are excellent performance among the UV PDs based 2D layered materials. Notably, it has both high responsivity and fast light response time, better than other 2D layered semiconductor photodetectors. Our finding demonstrates In4/3P2Se6 nanoflakes are promising materials for high performance UV PDs in the future.