Laser ion sources for ion implantation (invited)(abstract)

Abstract

The further progress in the employment of ion beams in technology depends on the improvement of the ion beam formation and transport systems. The range of the devices constructed now includes both weak current devices focusing the beam to less than 0.01 μm for the purpose of microelectronics, and powerful high current multibeam plants to modify metals and alloys. Among the wide range of such equipment are the universal devices able to generate the ion beams of different species without constructive changes. For these devices the laser plasma ion source is particularly helpful. This report presents a review of the 20-year study of the laser plasma, the parameters of laser plasma ion components, the means of the ion beam formation from laser plasma, as well as the results concerning the employment of laser plasma ion sources in analytical and technological equipment.