Laser interferometric nanolithography using a new positive chemical amplified resist

Abstract

The authors report on the progress of laser interference lithography at 266nm laser wavelength with a chemical amplified resist containing a polyvinyl derivate dissolved in propylene glycol monoethyl ether ester. A continuous-wave deep-UV source combined with a Lloyd mirror is a simple and useful tool for the fabrication of nanoscale periodic structures generally called nanoarrays. Aiming for a robust pattern transfer technique to fabricate nanoarrays into magnetic materials, the authors investigated the utility of a chemical amplification positive tone resist, despite the relatively high theoretical resolution limit of 133nm (λ∕2) pattern period for the laser source used. Taking advantage of this new type of resist, the authors demonstrated for the first time the fabrication of an 18Gbit∕in.2 dot pattern on a platinum thin film.