Abstract
Nanoscale patterns are fabricated by laser interference lithography (LIL) using Lloyd's mirror interferometer. LIL provides a patterning technology with simple, quick process over a large area without the usage of a mask. Effects of various key parameters for LIL, with 257 nm wavelength laser, are investigated, such as the exposure dosage, the half angle of two incident beams at the intersection, and the power of the light source for generating one or two dimensional (line and dot) nanoscale structures. The uniform dot patterns over an area of 20 mm x 20 mm with the half pitch sizes of around 190, 250, and 370 nm are achieved and by increasing the beam power up to 0.600 mW/cm2, the exposure process time was reduced down to 12/12 sec for the positive photoresist DHK-BF424 (DongJin) over a bare silicon substrate. In addition, bottom anti-reflective coating (DUV-30J, Brewer Science) is applied to confirm improvements for line structures. The advantages and limitations of LIL are highlighted for generating nanoscale patterns.
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