Abstract
Arsenic concentration profiles in a polycrystalline silicon/single-crystal silicon system were investigated by sputtered neutral mass spectrometry using a high-repetition-rate excimer laser. Beforehand, the arsenic profile in a SiO2/Si sample was measured to verify that this method can provide accurate profiles, unlike secondary ion mass spectrometry. The 300-nm polycrystalline silicon film was implanted with 5×1016 As ions cm−2 at 100 keV and then annealed at 850 °C for 30 min. The arsenic segregation at the polycrystalline silicon/single-crystal silicon interface was indisputably confirmed and the amount was accurately determined to be 2.2×1015 cm−2.
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