Abstract
The photothermal laser induced chemical vapor deposition of copper from its hexafluoroacetylacetonate trimethylvinylsilane derivative is studied as a function of added water vapor pressure. The height, width, electrical conductivity, and chemical composition of the deposited copper lines are measured. Under anhydrous conditions, the lines are characterized by a low growth rate, high carbon contamination, and poor electrical resistivity. In the presence of water vapor, a high growth rate (1800 μm/min) and high purity copper lines are obtained with a resistivity ratio of 1.1.
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