(hfac)Cu(I)(MP) (hfac=hexafluoroacetylacetonate, MP=4-methyl-1-pentene) and (hfac)Cu(I)(DMB) (DMB=3,3-dimethyl-1-butene) for the chemical vapor deposition of copper film

Abstract

New organometallic precursors for the metal organic chemical vapor deposition (MOCVD) of copper, (hfac)Cu(I)(MP) (hfac=hexafluoroacetylacetonate, MP=4-methyl-1-pentene) and (hfac)Cu(I)(DMB) (DMB=3,3-dimethyl-1-butene) were studied. Copper films could be deposited at the precursor vaporization temperature of 45 and 35°C. The deposition rate was about four to seven times higher than previously reported precursors such as (hfac)Cu(VTMS) (VTMS=vinyltrimethylsilane), (hfac)Cu(ATMS) (ATMS=allyltrimethylsilane) and (hfac)Cu(VCH) (VCH=vinylcyclohexane). The copper films deposited from these two precursors had a resistivity of about 2.0 μΩ cm in the deposition temperature range of 150 to 200°C.