Abstract
Ultrashort laser pulses are used to create surface structures on thin ($25~\unicode[STIX]{x03BC}\text{m}$) silicon (Si) wafers. Scanning the wafer with a galvanometric mirror system creates large homogeneously structured areas. The variety of structure shapes that can be generated with this method is exemplified by the analysis of shape, height and distance of structures created in the ambient media air and isopropanol. A study of the correlation between structure height and remaining wafer thickness is presented. The comparatively easy manufacturing technique and the structure variety that allows for custom-tailored targets show great potential for high repetition rate ion acceleration experiments.
Highlights
Over the last decade, the interaction of high-intensity laser fields with thin solid targets has attracted a great deal of attention due to its wide field of application
One of the underlying mechanisms is the target normal sheath acceleration (TNSA), where the heated electrons lead to a charge separation that creates strong electrostatic fields accelerating the ions[5]
To increase the number and energy of the hot electrons much effort has been spent on the improvement of the conversion efficiency of laser energy into hot electron energy
Summary
The interaction of high-intensity laser fields with thin solid targets has attracted a great deal of attention due to its wide field of application. During the interaction process high-energy electrons are emitted[1]. These ‘hot electrons’ give rise to an emission of x-rays[2] and high-energy ion beams[3, 4]. To increase the number and energy of the hot electrons much effort has been spent on the improvement of the conversion efficiency of laser energy into hot electron energy. The laser parameters, i.e., laser intensity, pulse duration and energy, and the target design can be tuned[6,7,8]
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