Abstract

Light trapping accomplished by texturing of the wafer surface has produced a significant gain in solar cell performance of crystalline silicon solar cells. However, the continuous need of cost reduction requires the use of less raw material and cost-effective processes. To meet these requirements, more advanced light trapping schemes are needed. In this work we propose an approach for maximizing light absorption in thin silicon wafers. This light-trapping approach uses low cost and industrially scalable processes such as black silicon and random pyramids. The absorption measured on a series of thin silicon wafers was compared to single pass and Yablonovitch absorption limits. The electronic properties of wafers with the proposed light-trapping approach were also investigated.

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