Abstract
Laser-induced desorption of NO from Si(111) has been investigated using state-specific detection techniques. The observed energy partitioning in the desorbed NO varies significantly with the NO coverage. Characterization of the energy partitioning with desorption-laser wavelengths in the range 355–1907 nm indicates that different substrate electronic excitations are responsible for the desorption at low NO coverage vs saturation coverage. The relationship between the substrate electronic excitation and observed vibrational-state-population distributions is explored.
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