Abstract
Photoinduced variations in the structure of glassy semiconductor films are considered from the standpoint of the theory of self-organization, including the formation of dissipative structures and their subsequent transformation under laser irradiation, which drives the system to the new state with minimum dissipated energy of the external mechanical field. Direct experimental evidence for the existence of cooperative (synergetic) self-organization processes is provided by the results of cyclic nanoindentation measurements in films of a chalcogenide glass with As2Se3 stoichiometric composition exposed to band-gap light (hv ≥ Eg)).
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