Relationships Between Gas-Phase Film Deposition, Properties and Structures of Thin SiO2 and BPSG Films

Abstract

This paper is devoted to the analysis of relationships between chemical vapor deposition (CVD) features and silicon dioxide and silicate glass film properties and structures. Deposition processes have been quantitatively characterized using an empirical parameter the effective constant of the deposition rate, The observed CVD kinetic features are explained by using a simplified multiroute and multistep kinetic scheme of the silicon-based thin-film gas-phase deposition processes, and a classification of the studied processes. The basic physical and chemical properties of thin glass films are explained in terms of the glass structural disordering, which defines the oxide film density, wet etch rate, shrinkage, and intensity of film-moisture interaction. The structure disordering depends in reverse order with respect to It is shown that the borophosphosilicate glass (BPSG) film structure and properties are affected by the quantity of boron atoms with a threefold coordination with respect to the oxygen atoms. The boron coordination in BPSG film tends to change from threefold to fourfold coordination along with the increase of phosphorus to boron ratio in the film. The best BPSG structural ordering and the best film properties correspond to the boron concentrations defined by an empirical equation The respective glass film structure is supposed to consist of and tetrahedra. © 2003 The Electrochemical Society. All rights reserved.