Abstract
Amorphous chalcogenide semiconducting materials are playing a pivotal role in modern technology. Such type of materials are very sensitive to electromagnetic radiations which is useful for infrared optics. In the present report, Bi doped in As40S60 thin films (As40S60, Bi06As40S54) of 800 nm thickness were prepared by thermal evaporation method. The Bi06As40S54 thin film is subjected to laser irradiation for photo induced study. The X-ray diffraction study reveals no structural change due to laser irradiation. The optical parameters are affected by both Bi addition and laser irradiation which brings a change in the transmitivity and absorption coefficient. The indirect optical band gap is found to be increased by 0.08 eV with laser irradiation with the decrease in disorderness. The Tauc parameter and Urbach energy which measures the degree of disorderness changes with Bi doping and irradiation. The refractive index is modified by the illumination process which is useful for optical applications. The optical property change is well supported by the X-ray photoelectron core level spectra.
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