Abstract
Laser assisted epitaxy is a potential technique for low temperature deposition, selective growth and maskless direct writing of device structures. The selective deposition nature of this laser CVD process makes it especially attractive for monolithic integration of devices, lateral compositional grading and direct writing of microscale structures (waveguides). Successful selective epitaxial growth of device quality GaAs and monolayer control of its growth rate has been achieved at low temperatures (250°C) using Ar+ion laser. Selective p and n‐type doping has also been realized using Dimethylzinc and Hydrogen Selinide respectively. We will report on some of the potential applications of this new technique and the characterization tools employed.
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