Abstract
The effect of variation of the number of highly strained InGaAs quantum wells embedded in GaAs layers on the crystal quality of the epitaxial layers and AlGaAs/GaAs laser diodes was investigated. With four quantum wells and very thick waveguide layers, reasonable efficient laser diodes emitting above 1100 nm with a narrow vertical far field (FWHM = 15°) were obtained. Broad area laser diodes with 200 µm stripe width and an optimised doping profile emit nearly 20 W cw output power. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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