Laser cutting of GaN/Al2O3 structures

Abstract

We report on intra-volume laser scribing process developed for GaN layers grown on single-side and double-side c-plane sapphire structures by hydride vapor phase epitaxy. Dies of 10 mm × 10 mm and 15 mm × 15 mm were cut from 2-inch wafers using a 1.064-μm Nd:YAG pulsed laser. The impact of laser cutting on the mechanical properties of GaN/Al2O3 structures is discussed.