Laser crystallization of Si films on glass

Abstract

By using glass substrates which approximate the thermal expansion of a deposited Si film, thermal stress cracking during laser crystallization is eliminated. Results on three types of transparent silicate glass are reported. Chemical vapor deposition is used to coat these substrates first with a buffer layer of SiO2 or Si3N4 and then with a Si film. When the Si films are melted with an argon ion laser beam, large crystal grains are produced. Secondary ion mass spectroscopy is used to determine the effectiveness of the buffer layer in isolating the Si from impurities in the glass.