Abstract
We have developed a new laser crystallization method that can make a poly-Silicon film with large crystal grains each having more than 1 micron in diameter on a glass substrate by using a high repetition pulse laser. This high repetition pulse laser is the harmonic of a solid state laser with a repetition rate of 10 MHz or more, and its pulse width is 10 ns or less, typically several tens of picoseconds. We used the green pulse laser having 40 W or more with a repetition rate of 80 MHz, and we obtained large long crystal grains with more than 1 x 10 microns. By using this poly-Silicon, we obtained N-channel type TFTs which have a mobility of 300 cm2/Vs or more. These TFTs enable the operation of 1 GHz at the level of a ring oscillator, when a voltage of a drive signal is 3.3 to 5 V.
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