Abstract
An excimer-laser-stimulated etching technique is described for controlled pulse-by-pulse stripping of molecular bilayers from GaAs surfaces. The process is carried out in a molecular beam epitaxy (MBE) system equipped with an auxiliary low-pressure Cl2 chamber. 193 nm ArF laser light is used to pattern surfaces via projection optical imaging with high processing speed and without exposure to air between etching and MBE steps. A laser stroboscopic method has permitted temporal reaction mapping of the etching mechanisms involved.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
