Abstract
A systematic comparison of quantum well infrared photodetectors (QWIPS) made by different molecular beam epitaxy (MBE) systems is presented. QWIPS with identical layer specifications were requested from three different MBE facilities. Measurements of dark current, detector responsivities, infrared absorption and detectivities were carried out. Although good uniformity between detectors was obtained within the same MBE wafer, variations were observed between samples with the same specifications from different MBE systems. The results of this study illustrate the present accuracy of MBE technology.
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