Abstract
A systematic comparison of quantum well infrared photodetectors (QWIPS) made by different molecular beam epitaxy (MBE) systems is presented. QWIPS with identical layer specifications were requested from three different MBE facilities. Measurements of dark current, detector responsivities, infrared absorption and detectivities were carried out. Although good uniformity between detectors was obtained within the same MBE wafer, variations were observed between samples with the same specifications from different MBE systems. The results of this study illustrate the present accuracy of MBE technology.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
