Abstract
The article presents the development of a novel laser-assisted grinding (LAG) process to reduce surface roughness and subsurface damage in grinding reaction-bonded silicon carbide (RB-SiC). A thermal control approach is proposed to facilitate the process development, in which a two-temperature model (TTM) is applied to control the required laser power to thermal softening of RB-SiC prior to the grinding operation without melting the workpiece or leaving undesirable microstructural alteration. Fourier’s law is adopted to obtain the thermal gradient for verification. An experimental comparison of conventional grinding and LAG shows significant reduction of machined surface roughness (37%–40%) and depth of subsurface damage layer (22%–50.6%) using the thermal control approach under the same grinding conditions. It also shows high specific grinding energy 1.5 times that in conventional grinding at the same depth of cut, which accounts for the reduction of subsurface damage as it provides enough energy to promote ductile-regime material removal.
Highlights
Due to its superb properties such as chemical inertness, high carrier saturation velocity, high temperature resistance and high specific stiffness, silicon carbide (SiC) is regarded as a promising material to replace silicon for the generation of power electronics, quantum computing and semiconductor devices
An experimental study is carried out to evaluate the effectiveness of this approach in comparison with conventional grinding in relation to surface roughness and depth of subsurface damage layer of the ground reaction-bonded silicon carbide (RB-SiC)
The reduction of the machined surface roughness, Ra, by laser-assisted grinding (LAG) is further confirmed by Figure 4, in which an improvement of 37%–40% is observed under the laser power of 80 W when the depth of cut varied from 5 μm to 20 μm
Summary
Due to its superb properties such as chemical inertness, high carrier saturation velocity, high temperature resistance and high specific stiffness, silicon carbide (SiC) is regarded as a promising material to replace silicon for the generation of power electronics, quantum computing and semiconductor devices. An experimental study is carried out to evaluate the effectiveness of this approach in comparison with conventional grinding in relation to surface roughness and depth of subsurface damage layer of the ground RB-SiC.
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