Abstract
Silicon wafers ofp- andn-type have been coated with gallium or arsenic and then irradiated with Nd: YAG laser pulses in order to obtain doped surface layers. Ohmic contacts and diodes have been produced with this method. Electrical measurements showed that the resistance is a function of laser power density. Only a weak difference in resistance between Ga-doped silicon and As-doped silicon was found.
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Schedule a callMore From: Zeitschrift für angewandte Mathematik und Physik ZAMP
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