Abstract
In this work, we study the role of laser irradiation in the control of the doping processing for directly grown graphene using microwave surface wave plasma chemical vapor deposition (MW-SWP-CVD) on the glass substrates. Raman spectrum and X-ray photoelectron spectroscopy (XPS) were used to investigate the evolution of the structure of doping graphene as a function of laser irradiation. Also, the effect of laser on the morphology for doping graphene using AuCl3 was observed by field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), and optical microscope techniques. The gold particles were collected on graphene network wrinkles, which were resulted from laser irradiation. These gold network wrinkles were further used to enhance the electrical properties of the graphene, resulting in a significant reduction in sheet resistance and an improvement of its stability after storage in ambient air. The presented approach paves the way to design promising transparent conductive electrodes for optoelectronic devices such as light-emitting diodes (LED), photodiodes and solar cells.
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