Abstract
Successful incorporation of laser annealing techniques into standard processing methods requires that the electrical characteristics of the devices not be degraded. In this work, a range of energy densities from pulsed u.v. and visible lasers which can be utilized in silicon on sapphire (SOS) technology to improve device performance without introducing any deleterious side effects is determined experimentally. Silicon islands were photolithographically defined and chemically etched (KOH) on standard SOS wafers which were subsequently exposed to pulsed (25 nsec) ruby ( λ = 6943 A ̊ ) and excimer ( λ = 2490 A ̊ ) laser radiation. Comparative studies of the effect of front and back side (through the sapphire) irradiation of the silicon on device performance were conducted. Using standard processing techniques, MOS transistors were fabricated after laser irradiation and electrically characterized. It was found that under certain conditions utilization of lasers in SOS processing, can result in an increase in the interface state density at both the top 〈100〉 Si-SiO 2 interface and the bottom Al 2O 3-Si interface. However, a set of conditions exists, in which it is possible to apply laser annealing to standard SOS processing so as to increase MOS/SOS transistor channel mobility by over 30% without causing any degradation of the device electrical characteristics.
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