Large-Signal Model of Graphene Field-Effect Transistors—Part I: Compact Modeling of GFET Intrinsic Capacitances

Abstract

We present a circuit-compatible compact model of the intrinsic capacitances of graphene field-effect transistors (GFETs). Together with a compact drain current model, a large-signal model of GFETs is developed combining both models as a tool for simulating the electrical behavior of graphene-based integrated circuits, dealing with the DC, transient behavior, and frequency response of the circuit. The drain current model is based in a drift-diffusion mechanism for the carrier transport coupled with an appropriate field-effect approach. The intrinsic capacitance model consists of a 16-capacitance matrix including self-capacitances and transcapacitances of a four-terminal GFET. To guarantee charge conservation, a Ward-Dutton linear charge partition scheme has been used. The large-signal model has been implemented in Verilog-A, being compatible with conventional circuit simulators and serving as a starting point toward the complete GFET device model that could incorporate additional non-idealities.