Abstract
We present a physics-based circuit-compatible model for double-gated two-dimensional semiconductor-based field-effect transistors, which provides explicit expressions for the drain current, terminal charges, and intrinsic capacitances. The drain current model is based on the drift-diffusion mechanism for the carrier transport and considers Fermi–Dirac statistics coupled with an appropriate field-effect approach. The terminal charge and intrinsic capacitance models are calculated adopting a Ward–Dutton linear charge partition scheme that guarantees charge conservation. It has been implemented in Verilog-A to make it compatible with standard circuit simulators. In order to benchmark the proposed modeling framework we also present experimental DC and high-frequency measurements of a purposely fabricated monolayer MoS2-FET showing excellent agreement between the model and the experiment and thus demonstrating the capabilities of the combined approach to predict the performance of 2DFETs.
Highlights
Since the emergence of graphene, over a surprisingly short period of time, an entire new family of two-dimensional materials (2DMs) has been discovered.[1]
The dynamic regime is described using a charge model derived for bulk MOSFETs11 that fails to capture the specific physics of the 2D channel, since it considers that the channel is always in a weak-inversion regime and the channel charge can be assumed to be linearly distributed along the device
For n-type devices, acceptor-like traps combination of both approaches gives rise to a compact largesignal model suitable for commercial TCAD tools employed in the simulation of circuits based on 2D semiconductor-based FETs (2DFETs)
Summary
Since the emergence of graphene, over a surprisingly short period of time, an entire new family of two-dimensional materials (2DMs) has been discovered.[1]. Rahman et al.[9] discussed a physics-based compact drain current model for monolayer TMDFETs considering drift-diffusion transport description and the gradual channel approximation to analytically solve the Poisson’s equation. For n-type devices, acceptor-like traps combination of both approaches gives rise to a compact largesignal model suitable for commercial TCAD tools employed in the simulation of circuits based on 2DFETs. The model has been (which are negatively charged when occupied by electrons and are energetically located in the upper half of the bandgap15) contribute the most to the device electrical characteristics.[16] shown to reproduce with good agreement DC and high-frequency measurements of a fabricated n-type MoS2-based FET, and has been used to predict the output transient of a three-stage ring oscillator.
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
