Large-area growth of Pb(Zr,Ti)O3 thin films by MOCVD

Abstract

Abstract Large-area growth of PZT thin films was performed using a 6–8 inch single wafer MOCVD system. Prior to the growth of the PZT films, the growth behavior of PbO,ZrO2 and TiO2 films was investigated. Uniform PZT thin films with a variation in thickness of less than 5% could successfully be grown on a 6–8 inch Si wafer. In comparing the step coverage characteristic of films grown by MOCVD with those grown by the RF sputtering, it was found that the MOCVD process was an effective method to obtain good step coverage characteristics.