Abstract
Magnetic tunnel junctions (MTJs) using polycrystalline Co2FeAl0.5Si0.5 (CFAS) electrodes with a MgO tunnel barrier were fabricated onto thermally oxidized Si substrates. Highly (001)-oriented and B2-ordered CFAS electrodes were obtained by optimizing growth conditions and postannealing temperature. The microfabricated MTJs exhibited relatively high tunnel magnetoresistance (TMR) ratios of 125% at room temperature and 196% at 7K. The large TMR obtained using oxidized Si substrates indicates that CFAS is promising for the practical applications.
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