Abstract
AbstractHafniaâbased ferroelectric tunnel junctions (FTJs) hold great promise for nonvolatile memory and emerging data storage applications. In this article, a large tunnel electroresistance effect with ultrathin Hf0.5Zr0.5O2 (HZO) barrier based FTJs is reported. Robust ferroelectricity is achieved with â1 nm films by stabilizing the rhombohedral polar phase of HZO (RâHZO) through a large compressive strain, induced by growing the film epitaxially on a SrTiO3 (001) substrate. The OFF/ON ratio of the junction resistance at zero bias is about 135 with â1 nm thick barrier, which increases to â105 with increasing the barrier thickness to â2.5 nm. The resistanceâarea product (RA) of tunnel junctions is reduced by nearly three orders of magnitude by using an â1 nm RâHZO barrier as compared with typically reported RA values for dopedâHfO2 barrier based FTJs, which significantly improves signalâtoânoise ratio during the read operation. These results set the stage for further exploration of Hafniaâbased FTJs for nonâvolatile memory applications.
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