Abstract
Abstract The soft magnetic films (SMFs) using in monolithic microwave integrated circuits (MMICs) are suffered from the lower ferromagnetic resonance frequency f FMR and resistivity. In this study, Fe0.5Co0.5-ZnO films with high resistivity were fabricated by a compositional gradient sputtering on (0 1 1) lead zinc niobate–lead titanate (PZN-PT) substrates. It is interesting to note that the resistivity of the ZnO-doped Fe0.5Co0.5 films is 10–30 times larger than that of pure Fe0.5Co0.5 films. An ultrahigh f FMR of 10.48 GHz were achieved at electric field of 8 kV/cm without bias magnetic field. The excellent microwave ferromagnetic performances in as-deposited films can be attributed to two reasons: (1) the large uniaxial anisotropy field induced by gradient composition of doping ZnO, (2) the strong magnetoelectric coupling between the ferromagnetic/ferrielectric interfaces under the condition of high resistivity in Fe0.5Co0.5-ZnO films.
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