Abstract
Abstract A lumped model which describes the largo-signal terminal behaviour of an IMPATT diode chip and package is developed. The diode chip is modelled by four lumps, in which avalanche is considered to occur in the lump adjacent to the junction. A lumped element equivalent circuit is found for the encapsulation, and the resulting set of first-order differential equations describing chip and package are solved on an 8k word computer allowing complete interaction between operator and machine. The large-signal characteristics of an IMPATT diode are compared with the computer simulation at various drive levels, frequencies and bias currents and are found to agree very closely
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