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Abstract
Pt Schottky barriers were formed on InP-based materials by a novel in-situ electrochemical process. The electrical characteristics, surfaces and interfaces of the Schottky diodes were investigated by current-voltage (I-V), capacitance-voltage (C-V), deep-level transient spectroscopy (DLTS) and atomic force microscopy (AFM) measurements. The mechanism for increasing the Schottky barrier heights (SBH) was explained in terms of possible ordered interface formation from the viewpoint of the disorder induced gap state (DIGS) model.
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