Abstract

Graphene, known as an alternative for silicon, has significant potential in microelectronic applications. The assembly of graphene on well-defined metal electrodes is a critical step in the fabrication of microelectronic devices. Herein, we present a convenient, rapid, and large-scale assembly method for deposition of Ag electrodes, namely optically induced electrodeposition (OIED). This technique enables us to achieve custom-designed and mask-free fabrication of graphene transistors. The entire assembly process can be completed within a few tens of seconds. Our results show that graphene-based transistors fabricated with Ag electrodes function as a p-type semiconductor. Transfer curves of different samples reveal similar trends of slightly p-type characteristics, which shows that this method is reliable and repeatable.

Highlights

  • Graphene transistors show extraordinary performance because of the unique electronic, physical, and mechanical properties of graphene [1,2,3,4]

  • Graphene was prepared by the Institute of Metal Research (IMR), Chinese Academy of Graphene was prepared by the Institute of Metal Research (IMR), Chinese Academy of Sciences

  • Purity)This in deionized wasof prepared by dissolving silverby nitrate in deionized solution water. This solution provides the raw materials for both determination of the position graphene provides the raw materials for both determination of the position graphene and fabrication of the and fabrication of the Graphene was characterized by atomic force microscopy (AFM)

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Summary

Introduction

Graphene transistors show extraordinary performance because of the unique electronic, physical, and mechanical properties of graphene [1,2,3,4]. Owing to its convenient and flexible operating characteristics, many micro/nano-scale materials, such as nanoparticles [13], carbon nanotubes [14], DNA [15] and cells [16], have been assembled onto patterned electrodes via the DEP technique. This method can achieve 100% assembly of graphene; but, the layers of graphene, the position and the direction between graphene and electrodes, and the photomask-induced patterned electrodes are limited to achieve a low-cost, controllable and large-scale graphene device assembly. The relative position of graphene and electrodes can be precisely controlled

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