Large planar Hall effect in bismuth thin films

Shuo-Ying Yang,Kai Chang,Stuart S P Parkin

doi:10.1103/physrevresearch.2.022029

Shuo-Ying Yang, Kai Chang + Show 1 more

Open Access

https://doi.org/10.1103/physrevresearch.2.022029

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Abstract

The authors show that a large planar Hall effect can originate from highly anisotropic electronic structures and ultrahigh carrier mobilities by studying the planar Hall effect along different crystal directions. The differences and similarities of planar Hall effects induced by topologically trivial and nontrivial reasons are compared

Highlights

The origin of the planar Hall effect (PHE) in various nonmagnetic semimetals has become a subject of considerable interest, especially in regard to the chiral anomaly that several of these semimetals exhibit
There are three electron pockets elongated along a direction slightly tilted away from the bisectrix axis and one hole pocket elongated along the trigonal axis
We have explored the origin of such a large PHE in bismuth films by quantitatively comparing PHE and anisotropic magnetoresistance (AMR) data to two models, one based on the chiral anomaly and one using a semiclassical transport model that reflects the anisotropy of orbital magnetoresistance

Summary

Introduction

The origin of the planar Hall effect (PHE) in various nonmagnetic semimetals has become a subject of considerable interest, especially in regard to the chiral anomaly that several of these semimetals exhibit. We have explored the origin of such a large PHE in bismuth films by quantitatively comparing PHE and AMR data to two models, one based on the chiral anomaly and one using a semiclassical transport model that reflects the anisotropy of orbital magnetoresistance.

Results

Conclusion