Abstract
We have studied the effect of a thin AlAs barrier in the middle of an GaAs/AlAs double barrier heterostructure on peak-to-valley current ratios. The addition of a 3 monolayer barrier in the middle of the GaAs well increased the peak-to-valley current ratios by over a factor of 5 at 77 K and increased the number of negative differential resistance regions from 2 to 3. The 3 monolayer middle barrier caused only a slight change in the peak current density hence the improvement in device performance was attributed to a decrease in the nonresonant valley currents. At 300 K the introduction of the middle barrier improved the peak-to-valley current ratios by only a factor of two indicating that the valley currents being suppressed by the middle barrier have a substantial non-thermionic component.
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