Abstract
Large area functional MoS2 thin films are emerging in many opto-electric applications. In this sense, control of charge transfer via molecular decoration to build up a better gas sensing application is a key issue. We have systematically investigated a feasible fabrication process to realize an optimal molecule decoration with tetrafluorotetracyanoquinodimethane (F4TCNQ) on the surface of MoS2. The field effect transistor gas sensors have been improved remarkably to response on NH3 under all range of analyte concentration by two or three orders of magnitude after molecular decoration. All this improvement can be attributed to charge transfer within a three-body system including NH3, F4TCNQ and MoS2. This research may provide insight guidance to develop large scale high-performance gas-sensors and stimulate an interest to future investigate charge transfer mechanism within molecule decorated two-dimensional materials.
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