Quantum Dots-Sensitized High Electron Mobility Transistor (HEMT) for Sensitive NO2 Detection

Abstract

Colloidal quantum dots (CQDs) are gaining increasing attention for gas sensing applications due to their large surface area and abundant active sites. However, traditional resistor-type gas sensors using CQDs to realize molecule recognition and signal transduction at the same time are associated with the trade-off between sensitivity and conductivity. This limitation has restricted their range of practical applications. In this study, we propose and demonstrate a monolithically integrated field-effect transistor (FET) gas sensor. This novel FET-type gas sensor utilizes the capacitance coupling effect of the CQD sensing film based on a floating gate, and the quantum capacitance plays a role in the capacitance response of the CQD sensing film. By effectively separating the gate sensing film from the two-dimensional electron gas (2DEG) conduction channel, the lead sulfide (PbS) CQD gate-sensitized FET gas sensor offers high sensitivity, a high signal-to-noise ratio, and a wide range, with a real-time response of sub-ppb NO2. This work highlights the potential of quantum dot-sensitized FET gas sensors as a practical solution for integrated gas sensor chip applications using CQDs.