Abstract
We investigated the spin-dependent transport properties of a lateral spin-valve device with a 600 nm long GaAs channel and perpendicularly magnetized MnGa electrodes. Its current–voltage characteristics show nonlinear behavior below 50 K, indicating that tunnel transport through the MnGa/GaAs Schottky barrier is dominant at low temperatures. We observed large magnetoresistance (MR) ratios up to 12% at 4 K when applying a magnetic field perpendicular to the film plane. Furthermore, a large spin-dependent output voltage of 33 mV is obtained. These values are the highest in lateral ferromagnetic metal/semiconductor/ferromagnetic metal spin-valve devices.
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