Abstract
A large positive magnetoresistance (MR) at room temperature was observed in a GaAs:MnAs granular thin film, in which MnAs nanoclusters were embedded in a GaAs matrix. Current-voltage characteristics and a MR effect of the GaAs:MnAs thin film were measured by a two-point-probe method. The MR ratio of the GaAs:MnAs granular thin film reached more than 600%, when a bias voltage of 110 V was applied to the film.
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