Abstract
In this work, wide band radio-frequency (RF) shear-horizontal surface acoustic wave (SH-SAW) resonators were designed and fabricated to attain a large effective electromechanical coupling (k <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ) over 35% near 1-GHz based on a thin-film lithium niobate (LiNbO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> /LN) on insulator layered substrate. In this study, the single-crystalline LiNbO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> thin film was bonded to a(100)-silicon carrier wafer with an intermediate silicon dioxide (SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ) layer to form a simple and low-cost hetero acoustic impedance waveguide. Fabricated resonators with Au-electrodes show scalable wavelengths from 3.2μm to 4.4μm (770 to 1008 MHz) featuring k <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> > 35% and Q of 250, which are sufficient for wide band RF filtering applications. Additionally, the potential of the SH-SAW resonator is demonstrated by a numerically synthesized ladder filter with a center frequency of 970 MHz, a 3-dB fractional bandwidth of 29.6%, and an insertion loss (IL) around 1.8 dB. It suggests the feasibility of developing wide bandwidth acoustic RF devices for potential 5G wireless communication through further design and fabrication optimizations.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call