Abstract
Bandgap energy control of a selectively grown InAlAsInGaAs multiple quantum well (MQW) on a mask-patterned planar InP substrate was studied in order to expand device applications using the large conduction band offset of 0.5 eV in the InAlAsInGaAs system. The growth mechanism in the InAlAs selective growth was mainly dominated by gas-phase diffusion through the lateral concentration gradient, like that in InGaAs, and distinguishable segregation of highly active Al species was not observed. The induced strain for the grown InAlAs was characterized to achieve a highly crystalline MQW structure. An extremely wide bandgap energy shift exceeding 350 meV was demonstrated for the selectively grown InAlAsInGaAs MQW without polycrystals on the mask.
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