Abstract
We report on a sputtering device based on a linear hollow cathode with a rectangular-shaped discharge cross-section of 100 × 20 mm that allows YBCO deposition on large area substrates. Due to the hollow cathode target arrangement the substrate is in an off-axis position. The sputter source is powered by a low frequency (0.5 Hz) pulsed DC voltage with a pulse width of 1 s. This relatively simple sputtering device does not need any auxiliary magnetic field. The sputtering gas is directly fed through the cathode slot thus facilitating the material transport towards the substrate. During the deposition the substrate is moved perpendicularly to the cathode slot in order to obtain uniformly thin films over large areas up to 3″ in diameter. YBCO thin films sputtered on (100) MgO and (001) YSZ buffered r-plane sapphire have been analysed by means of post growth in situ XPS, conventional RBS, and visible and FT-NIR Raman spectroscopy.
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