Abstract
Thin films of Aurivillius-type layered perovskites of Bi4Ti3O12 and SrBi2Ta2O9 have been epitaxially deposited by PLD on SrTiO3 single crystal substrates. Bi4Ti3O12 has been deposited as well on a CeO2/YSZ/Si(100) buffer layer, and on Pt-coated oxidized silicon for electrical measurements. Using a new technique for large area PLD, Bi4Ti3O12 has also been deposited on a whole (100)-oriented 3′′ Si wafer. The obtained films have a homogeneous thickness over the whole wafer corresponding to an area of about 45 cm2. The composition, structure, and electrical properties of the films are presented.
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