Large Area of Ultraviolet GaN-Based Photonic Quasicrystal Laser

Abstract

In this study, large-area GaN-based photonic quasicrystal (PQC) nanopillars were fabricated on an n-GaN substrate using the nanoimprint lithography (NIL) technique. Under optical pumping condition, a high lasing action from the GaN photonic quasicrystals was observed. The lasing wavelength is at 366 nm with a low threshold power density of 0.009 kW/cm2. To confirm the band-edge lasing mode, the finite-element method (FEM) was used to perform the simulation for the 12-fold symmetry photonic quasicrystal lattices.