Abstract
In this study, we demonstrated large-area high-quality multi-color emission from the 12-fold symmetric GaN photonic quasicrystal nanorod device which was fabricated using the nanoimprint lithography technology and multiple quantum wells regrowth procedure. High-efficiency blue and green color emission wavelengths of 460 and 520 nm from the regrown InxGa1−xN/GaN multiple quantum wells were observed under optical pumping conditions. To confirm the strong coupling between the quantum well emissions and the photonic crystal band-edge resonant modes, the finite-element method was applied to perform a simulation of the 12-fold symmetry photonic quasicrystal lattices.
Highlights
The GaN-based materials with the wide band gap and unique properties had been applied in many optoelectronic systems and devices, including light emitting diodes (LEDs) [1,2,3] and laser diodes (LDs) [4, 5]
We demonstrated the multiple color emission from a GaN-based 2D photonic quasicrystal (PQC)
High-efficiency blue and green color emissions from InxGa1−xN/ GaN multiple quantum well (MQW) were achieved with the regrowth procedure of the top InxGa1−xN/GaN MQWs grown on these facets, with an In composition ratio: InxGa1−xN/GaN-dependent InN fraction variations
Summary
The GaN-based materials with the wide band gap and unique properties had been applied in many optoelectronic systems and devices, including light emitting diodes (LEDs) [1,2,3] and laser diodes (LDs) [4, 5]. The GaN-based LEDs have been applied in traffic signals, display backlights [6,7,8], solid-state lighting [9, 10], biosensors [11], and optogenetics [12]. GaNbased nanorod LED with low dislocation, low internal field, and high light extraction efficiency [15, 16] could be a possible solution. Nanorods are considered to have a great advantage for improving the luminous efficiency in the green-to-red emission region, and numerous efforts have been adopted [45, 46]
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