Abstract
The authors have investigated O2/CF4 plasma etching of DuPont Kapton 'H' polyimide film using a new large-area microwave plasma apparatus. Uniform etching of a 700 cm2 sample area is achieved by combined rotational and translational motion of the substrate holder with respect to the microwave applicator. They have investigated the effect of various operating parameters, namely, pressure, etchant gas composition and flow rate, discharge power, and substrate temperature. A sharp maximum in etch rate is observed at 0.2 Torr (27 Pa) and 12% CF4 in O2; the thermal activation energy is found to be Ea=0.21+or-0.02 eV. These data agree well with recent findings by other workers.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
