Large-area lateral p-i-n photodiode on SOI

Abstract

Results of a large-area, low-capacitance lateral p-i-n photodiode in silicon-on-insulator (SOI) are presented. This photodiode possesses an antireflection coating optimized for blue light and is therefore appropriate for scintillation detector applications. An average external quantum efficiency of 78.6% and 68.4% is achieved for /spl lambda/=430 nm and 400 nm, respectively. The rise and fall times of the lateral p-i-n photodiode for light with a wavelength of 400 nm are 9.7 ns and 11.2 ns, respectively. The capacitance of the SOI p-i-n photodiode is 0.72 pF/mm/sup 2/. This photodiode combines a high quantum efficiency and a low capacitance with a high speed.