Abstract

ABSTRACT We report the recent progress of interband cascade (IC) lasers based on JnAs/Ga(In)Sb/A1Sb type-Il quantum wells (QWs).For the 4.5-j.im IC lasers, the internal loss was 1 1.6 cm' and the internal quantum efficiency (IQE) was 460% at 90 K. Whenmounted epi-side down on diamond, cw operation was observed with an external quantum efficiency (EQE) of 193%, a cwoutput power over 500 mW, and a threshold current density as low as 35 A/cm2 at 80 K. Dual-wavelength IC laser was alsodemonstrated. The device lased simultaneously at 4.482 and 4.568 .tm. At 110 K, a peak output power of 150 mW per facetwas achieved with 5i.ts pulses at 1-K}Iz repetition rate. The threshold current density, average external quantum efficiency(EQE), and peak output power of a 0.4-mm long device were 1 19 A/cm2, 278%, and 150 mW per facet, respectively.Keywords: Mid-Infrared laser, quantum cascade laser, diode laser, type-Il quantum well, infrared absorption spectroscopy 1. INTRODUCTION Mid-JR (2 to 25 .tm) light sources are in demand for a number of commercial, defense, and space applications. In particular,many important atmospheric molecules -

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