Abstract

In this study, a novel graphite boat was developed. This boat, with a three-tiered design, allows the growth of a multi-layer AlGaAs/GaAs double heterostructure (DH) to take place by liquid phase epitaxy (LPE) on 2 pieces of 40 mm diameter substrates per growth run. A shutter separates the three melt reservoirs located in the upper tier from the slider. The shutter lets the melt transfer from the melt reservoir to the slider. The slider has three wells, each large enough to cover 2 pieces of 40 mm diameter substrates. With this design, the graphite boat makes a sequential selection and dropping of the mell at desired time intervals possible. Preliminary results on 655 nm AlGaAs/GaAs DH red light emitting diodes (LEDs) grown by this novel graphite boat show very good uniformity and reproducibility, and hold promise for mass production and economical liquid phase epitaxy systems for fabricating such LEDs.

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