Abstract
The design and manufacturing technology of high-quality CdxHg1−xTe n+−n−p−p+-type mesaphotodiodes ∅ 300 μm for the spectral range of 3–5 μm are presented. The features of the design and technology as well as the main characteristics of the manufactured photodiodes are presented. It is shown that the use of a semitransparent nickel layer 5 nm thick deposited on the surface of the n+ layer makes it possible to reduce the series resistance Rser to 1–2 Ohm and the response time to 10−11 s.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
